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Researchers are making progress towards a significant memory breakthrough by developing technology that combines the features of NAND and RAM. This innovative tech has the potential to be more cost-effective to produce and significantly reduce power consumption.

Taking a novel approach

Researchers at the Korea Advanced Institute of Science and Technology (KAIST) are making strides towards a significant memory breakthrough with the development of a new memory device that merges the characteristics of DRAM and NAND flash memory. This innovative technology has the potential to offer a more cost-effective production method and greatly reduce power consumption, addressing key challenges in the current memory landscape.

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